r07ds1151ej0100 rev.1.00 page 1 of 7 jan 29, 2014 preliminary datasheet bcr20cm-12lb 600v - 20a - triac medium power use features ? i t (rms) : 20 a ? v drm : 600 v ? i fgti , i rgti , i rgt iii :30 ma(20ma) note6 ? tj: 150 c ? planar passivation type ? non-insulated type n-g outline applications vacuum cleaner, electric heater, light dimmer, copying machine, and controller for other motor and heater maximum ratings parameter symbol voltage class unit 12 repetitive peak off-state voltage note1 v drm 600 v non-repetitive peak off-state voltage note1 v dsm 720 v parameter symbol ratings unit conditions rms on-state current i t (rms) 20 a commercial frequency, sine full wave 360 conduction, tc = 126 c note3 surge on-state current i tsm 200 a 60 hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusion i 2 t 167 a 2 s value corresponding to 1 cycle of half wave 60 hz, surge on-state current peak gate power dissipation p gm 5 w average gate power dissipation p g (av) 0.5 w peak gate voltage v gm 10 v peak gate current i gm 2 a junction temperature tj ?40 to +150 c storage temperature tstg ?40 to +150 c mass ? 2.1 g typical value r07ds1151ej0100 rev.1.00 jan 29, 2014
bcr20cm-12lb preliminary r07ds1151ej0100 rev.1.00 page 2 of 7 jan 29, 2014 electrical characteristics parameter symbol rated value unit test conditions min. typ. max. repetitive peak off-state current i drm ? ? 2.0 ma tj = 125 c, v drm applied ? ? 3.0 tj = 150 c, v drm applied on-state voltage v tm ? ? 1.5 v tc = 25 c, i tm = 30a, instantaneous measurement gate trigger voltage note2 v fgt ? ? 1.5 v tj = 25 c, v d = 6 v, r l = 6 , r g = 330 ? v rgt ? ? 1.5 v ?? v rgt ?? ? ? 1.5 v gate trigger curent note2 i fgt ? ? 30 note6 ma tj = 25 c, v d = 6 v, r l = 6 , r g = 330 ? i rgt ? ? 30 note6 ma ?? i rgt ?? ? ? 30 note6 ma gate non-trigger voltage v gd 0.2 ? ? v tj = 125 c, v d = 1/2 v drm 0.1 ? ? v tj = 150 c, v d = 1/2 v drm thermal resistance r th (j-c) ? ? 1.2 c/w junction to case note3, note4 critical-rate of rise of o ff-state (dv/dt)c 10 ? ? v/ s tj = 125 c commutation voltage note5 1 ? ? tj = 150 c notes: 1. gate open. 2. measurement using the gate trigger characteristics measurement circuit. 3. case temperature is measured at the t 2 tab 1.5 mm apart from the molded case. 4. the contact thermal resistance r th (c-f) in case of greasing is 1.0 c /w. 5. test conditions of the critical-rate of rise of o ff-state commutation voltage is shown in the table below. 6. high sensitivity (i gt 20 ma) is also available. (i gt item: 1) test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125/150 c 2. peak off-state voltage v d = 400 v 3. rate of decay of on-state commutating current (di/dt)c = ?10 a/ms
bcr20cm-12lb preliminary r07ds1151ej0100 rev.1.00 page 3 of 7 jan 29, 2014 performance curves 10 2 10 3 10 1 ?40 0 40 80 120 typical example 10 2 10 3 10 1 ?40 0 40 80 120 160 typical example 10 1 10 ? 1 10 0 10 1 10 2 10 3 10 4 10 0 10 1 10 2 0 maximum on-state characteristics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 60hz) surge on-state current (a) gate characteristics (i, ii and iii) gate current (ma) gate voltage (v) gate trigger voltage vs. junction temperature junction temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) gate trigger current vs. junction temperature junction temperature (c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) maximum transient thermal impedance characteristics (junction to case) conduction time (cycles at 60hz) transient thermal impedance (c/w) 4 0123 10 3 10 2 10 1 10 0 tj = 25c tj = 150c 160 80 120 40 200 240 v gm = 10v p gm = 5w v gt = 1.5v p g(av) = 0.5w i gm = 2a i fgt i , i rgt i , i rgt iii i fgt i i rgt i i rgt iii 10 ? 1 10 0 10 1 10 2 0.0 0.4 1.2 1.6 0.8 10 3 0.2 1.4 1.0 0.6
bcr20cm-12lb preliminary r07ds1151ej0100 rev.1.00 page 4 of 7 jan 29, 2014 0 5 10 15 20 25 30 on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation rms on-state current (a) case temperature (c) allowable case temperature vs. rms on-state current rms on-state current (a) ambient temperature (c) allowable ambient temperature vs. rms on-state current junction temperature (c) repetitive peak off-state current (tj = tc) repetitive peak off-state current (tj = 25c) 100 (%) repetitive peak off-state current vs. junction temperature holding current vs. junction temperature junction temperature (c) holding current (tj = tc) holding current (tj = 25c) 100 (%) rms on-state current (a) ambient temperature (c) allowable ambient temperature vs. rms on-state current 03 2 145 0 20 40 80 60 100 120 140 160 ?40 0 40 80 120 160 ?40 0 40 80 120 160 natural convection no fins curves apply regardless of conduction angle resistive, inductive loads typical example typical example 0 102030 0 20 40 80 60 100 120 140 160 curves apply regardless of conduction angle 360 conduction resistive,inductive loads 0 20 40 80 60 100 120 140 160 160 160 t2.3 120 120 t2.3 100 100 t2.3 curves apply regardless of conduction angle. resistive, inductive loads natural convection all fins are black painted aluminum and greased 10 6 10 5 10 4 10 3 10 2 10 3 10 2 10 1 30 20 10 40 0 0 5 10 15 20 25 30 360 conduction resistive, inductive loads
bcr20cm-12lb preliminary r07ds1151ej0100 rev.1.00 page 5 of 7 jan 29, 2014 10 1 33010 2 10 1 10 2 10 3 10 4 rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 100 (%) breakover voltage vs. rate of rise of off-state voltage (tj=125c) rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 100 (%) breakover voltage vs. rate of rise of off-state voltage (tj=150c) breakover voltage vs. junction temperature junction temperature (c) breakover voltage (tj = tc) breakover voltage (tj = 25c) 100 (%) latching current (ma) latching current vs. junction temperature junction temperature (c) 0 20 40 80 60 100 120 140 160 0 20 40 80 60 100 120 160 140 0 20 40 80 60 100 120 160 140 typical example typical example tj = 125c iii quadrant i quadrant typical example tj = 150c iii quadrant i quadrant 10 2 10 3 10 0 10 1 10 2 10 1 33010 2 10 3 10 4 10 1 ?40 0 40 80 120 160 ?40 0 40 80 120 160 distribution t 2 + , g ? typical example commutation characteristics (tj=125c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) commutation characteristics (tj=150c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) 10 1 10 2 10 0 10 1 10 2 10 0 i quadrant main voltage main current i t (di/dt)c v d time time (dv/dt)c typical example tj = 150c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum characteristics value main voltage main current i t (di/dt)c v d time time (dv/dt)c typical example tj = 125c i t = 4a = 500 s v d = 200v f = 3hz minimum characteristics value iii quadrant t 2 + , g + t 2 ? , g ? typical example
bcr20cm-12lb preliminary r07ds1151ej0100 rev.1.00 page 6 of 7 jan 29, 2014 10 3 10 2 10 1 10 1 10 0 10 2 gate trigger current (tw) gate trigger current (dc) 100 (%) gate current pulse width ( s) gate trigger current vs. gate current pulse width typical example c 1 = 0.1 to 0.47 f r 1 = 47 to 100 c 0 = 0.1 f r 0 = 100 gate trigger characteristics test circuits recommended circuit values around the triac test procedure i test procedure iii test procedure ii 6 6 6 6v 6v 6v 330 330 330 a v a v a v c 1 c 0 r 0 r 1 i rgt i i rgt iii i fgt i load
bcr20cm-12lb preliminary r07ds1151ej0100 rev.1.00 page 7 of 7 jan 29, 2014 package dimensions ordering information orderable part number packing quantity remark bcr20cm-12lb#bb0 tube 50 pcs. straight type bcr20cm-12lb-1#bb0 tube 50 pcs. straight type, i gt item: 1 bcr20cm-12lb ?? #bb0 tube 50 pcs. ?? : lead forming type BCR20CM12LB1 ?? #bb0 tube 50 pcs. ?? : lead forming type, i gt item: 1 note : please confirm the specificat ion about the shipping in detail.
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